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| NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor D P48N02LD TO-252 (D PAK) PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 14m ID 52A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS 20 52 35 156 33 250 8.6 45 25 -55 to 150 275 UNITS V TC = 25 C TC = 100 C ID IDM IAR A L = 0.1mH L = 0.05mH TC = 25 C TC = 100 C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 C SYMBOL RJC RJA RCS TYPICAL MAXIMUM 2.5 65 UNITS C / W 0.7 Pulse width limited by maximum junction temperature. Duty cycle 1 ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 C 25 1 1.6 3 250 25 250 nA A V LIMITS UNIT MIN TYP MAX 1 JUL-11-2001 NIKO-SEM 1 N-Channel Logic Level Enhancement Mode Field Effect Transistor ID(ON) RDS(ON) 1 P48N02LD TO-252 (D PAK) On-State Drain Current Drain-Source On-State 1 Resistance VDS = 10V, VGS = 10V VGS = 4.5V, ID = 21A VGS = 10V, ID = 26A VDS = 10V, ID = 26A DYNAMIC 60 16 11 32 20 14 A m S Forward Transconductance gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 Ciss Coss Crss Qg Qgs Qgd 2 1200 1800 VGS = 0V, VDS = 15V, f = 1MHz 600 350 35 VDS = 10V, VGS = 10V, ID = 52A 8 5 6 VDS = 15V, RL = 1 ID 52A, VGS = 10V, RGEN = 24 120 40 105 16 250 90 200 nS 1000 500 60 nC pF Gate-Source Charge Gate-Drain Charge 2 2 Turn-On Delay Time Rise Time td(on) tr Turn-Off Delay Time Fall Time 2 2 td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 3 1 IS ISM VSD trr IRM(REC) Qrr IF = IS, dlF/dt = 100A / S IS = 26A, VGS = 0V 0.9 70 200 0.043 52 156 1.3 A V nS A C Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P48N02LD", DATE CODE or LOT # 2 JUL-11-2001 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P48N02LD TO-252 (D PAK) TO-252 (DPAK) MECHANICAL DATA mm Dimension Min. A B C D E F G 9.35 2.2 0.48 0.89 0.45 0.03 6 Typ. Max. 10.1 2.4 0.6 1.5 0.6 0.23 6.2 H I J K L M N 6.4 5.2 0.6 0.64 4.4 Dimension Min. Typ. 0.8 6.6 5.4 1 0.9 4.6 Max. mm 3 JUL-11-2001 |
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